Simulation of field electron emission of C and SiC nanotubes

V. Sorokina, K. Nikiforov
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引用次数: 1

Abstract

We study the field emission current density of carbon nanotubes and silicon carbide nanotube using first-principles methods. The simulation and analysis of the field emission are carried out based on density-functional theory using a hybrid functional B3LYP and 6-31g basis set for initial approximation. The structures considered are the ideally open (3, 0), (3, 3), (5, 5) nanotubes. Ideal models have been optimized in terms of the total energy, forming closed or deformed structures. Calculated field emission properties of individual nanotubes are compared.
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C和SiC纳米管的场电子发射模拟
利用第一性原理方法研究了碳纳米管和碳化硅纳米管的场致发射电流密度。基于密度泛函理论,采用混合泛函B3LYP和6-31g基集作为初始近似,对场发射进行了模拟分析。考虑的结构是理想的开放(3,0),(3,3),(5,5)纳米管。在总能量方面优化了理想模型,形成封闭或变形的结构。对计算得到的各纳米管场发射特性进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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