Study on the Photosensitivity of a Composite Based on Lead Selenide and Selenite

Abstract

This paper discusses the technology of formation of photoresistive structures based on a composite of lead selenide and lead selenite. The structures are formed by the oxidation of n-PbSe polycrystalline films. Film The surface modification mechanism of n-PbSe films in the oxidation process is analyzed by a Zeiss Merlin scanning electron microscope (SEM). The new results of the authors on the oxidation mechanism of n-PbSe, together with their earlier publications, are summarized and their consistency with each other is examined. A theoretical model (hypothesis) of the potential profile of a photosensitive heterojunction is proposed, in which each crystal of the n-PbSe film during oxidation in an atmosphere of dry air forms a continuous shell on the p-PbSeO₃ surface. The hypothesis on the structural model of the photosensitive heterojunction proposed by other authors, which is based on the oxidation mechanism proposed by us, is practically confirmed in this study.