Scattering of low-energy Ne+ ions from the stepped surface of InGaP(001)<110> at the small angles of incidence

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Physics and Chemistry of Solid State Pub Date : 2023-09-26 DOI:10.15330/pcss.24.3.542-548
U.O. Kutliev, M.U. Otabaev, M.K. Karimov, F.K. Masharipov, I. Woiciechowski
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引用次数: 0

Abstract

Scattering of Ne+ ions at small angles of incidence from a stepped InGaP(001) <110> surface by the E0=5 keV was simulated using computer simulation. The trajectories of dechanneled ions from defect surface, as well as their energies at the scattering and scattering angle, are studied. It is shown that before dechanneling, the frequency and amplitude of the trajectory of ions, which move the surface channel formed by the stepped atom, increase. The energy distributions of these ions are obtained and the part of the spectrum corresponding to these ions is determined. It has been established that the energetic dechanneled ions formed low intensity peaks on the low-energy part of the spectrum.
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低能Ne+离子在InGaP阶梯表面的散射(001)<110>在小入射角处
阶梯InGaP(001) <110>小入射角下Ne+离子的散射用计算机模拟了E0=5 keV对表面的影响。研究了缺陷表面脱通道离子的运动轨迹,以及它们的散射能量和散射角。结果表明,在去通道化之前,离子在阶梯式原子形成的表面通道上运动的轨迹频率和幅度增大。得到了这些离子的能量分布,并确定了这些离子对应的光谱部分。已经确定,高能脱通道离子在光谱的低能部分形成低强度峰。
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CiteScore
1.70
自引率
14.30%
发文量
83
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