Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity

IF 1.3 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Ferroelectrics Letters Section Pub Date : 2023-10-05 DOI:10.1080/07315171.2023.2238173

Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai

{"title":"Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity","authors":"Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai","doi":"10.1080/07315171.2023.2238173","DOIUrl":null,"url":null,"abstract":"AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/07315171.2023.2238173","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

Abstract

AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

利用与储能容量相关的机电行为优化锡取代锆钛酸铅铋薄膜的MPB

摘要本文研究了锡取代锆铋钛酸铅薄膜(PBZST薄膜)的机电性能。利用脉冲激光沉积技术(PLD)，通过改变掺杂铋的~ (Zr, Sn)/Ti的比例来调整接近MPB的PZST薄膜生长参数。在优化条件下，利用PLD技术在Pt/TiO2/SiO2/Si衬底上生长出化学计量公式为Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 - xO3 (x = 0.935, 0.940, 0.945和0.950)的薄膜(~ 250 nm)。P-E环证实MPB在x = 0.945附近，进一步的PFM测量也证实了这一点。通过对PFM相位和幅值滞回线的分析，计算出在MPB成分下，局部压电系数d33 = 330 pm/V，残余应变值0.33 (x = 0.945)。关键词:机电陶瓷储能脉冲激光沉积衬底披露声明作者未报告潜在利益冲突。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Ferroelectrics Letters Section 物理-物理：凝聚态物理

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

4.8 months

期刊介绍： Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.