Hoai Thuong Nguyen, Sergey V. Baryshnikov, A. Yu. Milinsky, Elena V. Stukova
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引用次数: 0
Abstract
Abstract The present work reports the experimental results of studying linear and nonlinear dielectric properties of a ferroelectric nanocomposite from RbNO3 embedded in pores of an Al2O3 matrix. The dielectric relaxation times were determined above and below the phase transition temperature of pure RbNO3 (436 K). It was shown that for RbNO3 incorporated into nanosized pores of the Al2O3 matrix, a decrease in the phase transition temperature and a change in relaxation times were observed.
期刊介绍：
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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