Photocatalytic Characteristics of Cobalt Doped ZnO and Cobalt/Manganese Co-Doped ZnO Nanocrystalline Materials Synthesized by Soft Chemical Route: Effective Elimination of Orange G Dye under UV Light

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2239095
Elizabeth Kuruvilla, Arputharaj Samson Nesaraj, Vinaya Jose, Vismaya Jose, Manasai Arunkumar
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Abstract

The cobalt (Co) doped ZnO (Zn1-xCoxO1-δ) and cobalt (Co)/manganese (Mn) co-doped ZnO (Zn1-x-yMnxCoyO1-δ) nanocrystalline materials were prepared using soft chemical synthesis route. Their fundamental and photo-physical properties were studied by XRD, FTIR, EDAX, SEM, TEM, BET and UV techniques. The photocatalytic studies of the samples were carried out using Orange G (OG) dye as a model contaminant where 25 mol% Co/Mn co-doped ZnO (CM-25) showed a higher degradation percentage (80%) than that of all Co doped ZnO samples. The factors influencing photocatalytic degradation of dye such as, amount of catalyst, dye concentration and pH were also studied.
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软化学法合成钴掺杂ZnO和钴/锰共掺杂ZnO纳米晶材料的光催化特性:紫外光下对橙色G染料的有效去除
采用软化学合成方法制备了钴(Co)掺杂ZnO (Zn1-xCoxO1-δ)和钴(Co)/锰(Mn)共掺杂ZnO (Zn1-x-yMnxCoyO1-δ)纳米晶材料。采用XRD、FTIR、EDAX、SEM、TEM、BET和UV等技术研究了其基本性质和光物理性质。以橙色G (OG)染料为模型污染物对样品进行了光催化研究,其中25 mol% Co/Mn共掺杂ZnO (CM-25)的降解率(80%)高于所有Co掺杂ZnO样品。研究了催化剂用量、染料浓度、pH值等因素对光催化降解染料的影响。
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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