N. Jarucha, Y. Ruangtaweep, P. Meejitpaisan, P. Nawarat, P. Kanthang, N. Wongdamnern, P. Limsuwan, H.J. Kim, J. Kaewkhao, T. Sareein
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引用次数: 0
Abstract
AbstractThis paper investigated the europium-doped lithium sodium potassium borate glasses (LNKBEu). Glass was made using a melt-quenching technique with a range of europium doping concentrations ranging from 0.0 to 5.0 mol%. The absorption spectra showed that photons in the visible light and near infrared ranges were absorbed by the LNKBEu glasses. Photon absorption at 394 nm can excite the mirror to emit a number of photons in the VIS region, such as 590, 613, 652, and 701 nm. The results showed that 3.0 mol% was the optimal concentration of LNKBEu glass. Therefore, 3.0LNKBEu glass was studied using Judd-Ofelt (JO) analysis, which revealed an interesting possibility of its use. This glass is a high power red laser device.Keywords: Alkali borate glasseseuropiumrare earthphotoluminescence Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis project is funded by the National Research Council of Thailand (NRCT) (Contract No. N41A650404) and CERNTEK COMPANY LIMITED. The authors would like to thank graduate students and research associates at the Center of Excellence in Glass Technology and Materials Science, as well as the Division of Industrial Materials Faculty of Science and Technology Rajamangala University of Technology Phra Nakhon, for their continuous collaboration in research.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.