P. Yamchumporn, K. Boonin, K. Singsoog, T. Seetawan, J. Kaewkhao
{"title":"Investigation of the Structural and Electrical Characteristics of Thermoelectric Glass 20Li <sub>2</sub> O-40V <sub>2</sub> O <sub>5</sub> -20B <sub>2</sub> O <sub>3</sub> -20ZnO with Bi <sub>2</sub> Te <sub>3</sub> Doping","authors":"P. Yamchumporn, K. Boonin, K. Singsoog, T. Seetawan, J. Kaewkhao","doi":"10.1080/10584587.2023.2234581","DOIUrl":null,"url":null,"abstract":"AbstractThe conventional melt-quenching synthesis was used to produce a series of thermoelectric glasses with the compositions 20Li2O-40V2O5-20B2O3-20ZnO (LVBZ) with Bi2Te3 doping as a percentage is 0, 5, 10, 15, 20, and 25 by weight. To discover the potential of thermoelectric glass, a comprehensive study was conducted on a series of samples using a combination of methods for analyzing both their structural and electrical properties. The structure exhibits the findings of the X-ray diffraction (XRD) analysis compositional investigation. It was discovered that the intensity within the LiV3O8 phase decreased with increasing dopant Bi2Te3 concentration, which produced an impact on the thermoelectric properties. The density value highest at 25 wt% doping and was 3.17 g/cm3. Furthermore, the thermoelectric properties of the samples were examined using ZEM-3 series instruments. The behavior of the semiconductor material is represented by the continual decrease in electrical resistivity value. The N-type thermoelectric material classification is represented by the verified Seebeck coefficient value. Out of the samples tested, the LVBZ with 15% Bi2Te3 doping by weight demonstrated the highest electrical performance in this series, with a power factor of 0.07 µW/mK2 at 668 K. The examined power factor values lead to the conclusion that the result of electrical conductivity increases with testing temperature.Keywords: Wordmelt-quenchingthermoelectric glasspower factor AcknowledgmentsThe authors would like to thanks Thermoelectric Research Laboratory, Center of Excellence on Alternative Energy, Research and Development Institution, Sakon Nakhon Rajabhat University for thermoelectric properties measurements. Thanks, are also due to Research and Development Institute, NPRU for facilities. K. Boonin and J. Kaewkhao would like to thanks National Research Council of Thailand (NRCT) and Thailand Science Research and Innovation (TSRI) for supporting this research.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis project was funded by National Research Council of Thailand (NRCT) and TENSOR PRODUCTS LIMITED PARTNERSHIP for project number N41A650415.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"132 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234581","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractThe conventional melt-quenching synthesis was used to produce a series of thermoelectric glasses with the compositions 20Li2O-40V2O5-20B2O3-20ZnO (LVBZ) with Bi2Te3 doping as a percentage is 0, 5, 10, 15, 20, and 25 by weight. To discover the potential of thermoelectric glass, a comprehensive study was conducted on a series of samples using a combination of methods for analyzing both their structural and electrical properties. The structure exhibits the findings of the X-ray diffraction (XRD) analysis compositional investigation. It was discovered that the intensity within the LiV3O8 phase decreased with increasing dopant Bi2Te3 concentration, which produced an impact on the thermoelectric properties. The density value highest at 25 wt% doping and was 3.17 g/cm3. Furthermore, the thermoelectric properties of the samples were examined using ZEM-3 series instruments. The behavior of the semiconductor material is represented by the continual decrease in electrical resistivity value. The N-type thermoelectric material classification is represented by the verified Seebeck coefficient value. Out of the samples tested, the LVBZ with 15% Bi2Te3 doping by weight demonstrated the highest electrical performance in this series, with a power factor of 0.07 µW/mK2 at 668 K. The examined power factor values lead to the conclusion that the result of electrical conductivity increases with testing temperature.Keywords: Wordmelt-quenchingthermoelectric glasspower factor AcknowledgmentsThe authors would like to thanks Thermoelectric Research Laboratory, Center of Excellence on Alternative Energy, Research and Development Institution, Sakon Nakhon Rajabhat University for thermoelectric properties measurements. Thanks, are also due to Research and Development Institute, NPRU for facilities. K. Boonin and J. Kaewkhao would like to thanks National Research Council of Thailand (NRCT) and Thailand Science Research and Innovation (TSRI) for supporting this research.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis project was funded by National Research Council of Thailand (NRCT) and TENSOR PRODUCTS LIMITED PARTNERSHIP for project number N41A650415.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.