{"title":"Phase Formation, Microstructure and Electric Properties of Vanadium Doped Lead-Free BaTi <sub>0.91</sub> Sn <sub>0.09</sub> O <sub>3</sub> Ceramics","authors":"Wiwat Pattanakasem, Nipaphat Charoenthai, Naratip Vittayakorn, Theerachai Bongkarn","doi":"10.1080/10584587.2023.2234566","DOIUrl":null,"url":null,"abstract":"Abstract Lead-free Ba(Ti0.91Sn0.09)1-xVxO3 (BTSV, x = 0, 0.005,0.010, 0.015, and 0.020) ceramics were prepared by the conventional solid-state sintering method with a calcination temperature of 1200 °C for 2 h and a sintering temperature between 1350 °C and 1400 °C for 4 h. The effect of vanadium (V) doping on the phase formation, microstructure and electrical properties of the ceramics was investigated. X-ray diffraction (XRD) measurements revealed that the ceramics with x = 0 and 0.005 had pure perovskite structures with no detectable impurity, while the ceramics with x ≥ 0.010 exhibited perovskite structures and had secondary impurity phases. Coexisting orthorhombic and tetragonal phases were observed and the Rietveld refinement analysis suggested that the tetragonal phase increased with increased V5+ substitution. When x increased from 0 to 0.010, the average grain size increased from 47 to 62 µm and then dropped, while the density (ρ) decreased from 5.98 to 5.64 g/cm3 when x increased. Furthermore, the BTSV ceramics exhibited increased porosity, Curie temperatures (T C ∼ 42 °C to 52 °C) and coercive field (E c), while the dielectric constant at the Curie temperature (εC) and the remnant polarization (P r) of the ceramics decreased (∼18023 to 6110 and ∼7.42 to 4.88 µC/cm2, respectively) when V5+ doping increased.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"79 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234566","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract Lead-free Ba(Ti0.91Sn0.09)1-xVxO3 (BTSV, x = 0, 0.005,0.010, 0.015, and 0.020) ceramics were prepared by the conventional solid-state sintering method with a calcination temperature of 1200 °C for 2 h and a sintering temperature between 1350 °C and 1400 °C for 4 h. The effect of vanadium (V) doping on the phase formation, microstructure and electrical properties of the ceramics was investigated. X-ray diffraction (XRD) measurements revealed that the ceramics with x = 0 and 0.005 had pure perovskite structures with no detectable impurity, while the ceramics with x ≥ 0.010 exhibited perovskite structures and had secondary impurity phases. Coexisting orthorhombic and tetragonal phases were observed and the Rietveld refinement analysis suggested that the tetragonal phase increased with increased V5+ substitution. When x increased from 0 to 0.010, the average grain size increased from 47 to 62 µm and then dropped, while the density (ρ) decreased from 5.98 to 5.64 g/cm3 when x increased. Furthermore, the BTSV ceramics exhibited increased porosity, Curie temperatures (T C ∼ 42 °C to 52 °C) and coercive field (E c), while the dielectric constant at the Curie temperature (εC) and the remnant polarization (P r) of the ceramics decreased (∼18023 to 6110 and ∼7.42 to 4.88 µC/cm2, respectively) when V5+ doping increased.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.