N. Singkiburin, N. Mahingsa, N. Srisittipokakun, N. Luewarasirikul, R. Rajaramakrishna, S. Kothan, C. Kedkaew, J. Kaewkhao
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引用次数: 0
Abstract
AbstractThe glass samples (35-x)B2O3:35SiO2:12Na2O:7.9CaO:0.1Sb2O3:10BaO:xCr2O3 with a variation of Cr2O3 content were successfully fabricated and characterized for solid-state lighting material applications. The results showed the most suitable composition within the range of study at 0.02 mol% of Cr2O3. This composition gave higher reflection loss (RL), lower oxide polarizability, and lower molar refractivity. The Commission International de I'Eclairage (CIE) chromaticity coordinates confirmed a strong orange color emission. Hence, this suggests that the 0.02 mol% Cr2O3 glass is a good candidate and cost-effective for orange-emitting solid-state lighting material applications. This study will be a useful literature source for further development in this field.Keywords: Borosilicate glassCr2O3 concentrationluminescence propertiesTanabe–Sugano diagram AcknowledgmentsJ. Kaewkhao and N. Srisittipokakun would like to thanks Thailand Science Research and Innovation (TSRI) for partially supporting this research.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research has been funded by Research Council of Thailand (NRCT) and Gemories Thailand Co. Ltd. (Project number N41A650403). This research was partially supported by Chiang Mai University.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.