{"title":"Effects of La Doping on Local Structure of Hafnium Oxide Studied by X-Ray Absorption Spectroscopy","authors":"Suparat Tongpeng, Suttipong Wannapaiboon, Pattanaphong Janphuang, Sukanda Jiansirisomboon","doi":"10.1080/10584587.2023.2234560","DOIUrl":null,"url":null,"abstract":"AbstractHfO2-based films prepared by the integration of the sol-gel method and spin-coating procedure were used as the study system to investigate the influence of La doping by varying the La contents of 20, 40, 50, and 60 wt%. GIXRD, XANES, and EXAFS measurements were performed to analyze phase formation, crystal structure, and local structure of the films. The XANES data of the Hf L3-edge show no significant difference with respect to an increase in La content, indicating a considerable stability of the hafnium ion in the +4 oxidation state. Moreover, the EXAFS spectrum shows that the coordination number of Hf4+ is seven and the Hf–O bond length is ∼2.11 Å, which additionally confirms the formation of monoclinic HfO2 structure. The contributions of the second coordination shells, which are assigned to the Hf–Hf and Hf–La bonds, become well-structured with increasing La concentration in the HfO2 structure. However, the study suggests that the La-doped concentration affects the phase transformation from monoclinic to tetragonal and finally orthorhombic phase, leading to the presence of ferroelectric materials.Keywords: La-doped HfO2thin filmsphase transitionXANESEXAFS AcknowledgmentsThis work was supported by the Suranaree University of Technology (SUT) by Office of the Higher Education Commission under NRU Project of Thailand and Synchrotron Light Research Institute (Public Organization), SLRI, Thailand at BL 6A for all facilities and financial supports. The authors wish to thank the Synchrotron Light Research Institute for the provision of beamtime for GIXRD and XAS at BL1.1W. Dr. Prae Chirawatkul and Dr. Chatree Saiyasombat of BL1.1W are acknowledged for their fruitful discussion and assistance during the experiment. The figures in this article were created using Adobe Illustrator, SketchUp, BioRender, CaRIne v.3, and Microsoft PowerPoint.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"67 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234560","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractHfO2-based films prepared by the integration of the sol-gel method and spin-coating procedure were used as the study system to investigate the influence of La doping by varying the La contents of 20, 40, 50, and 60 wt%. GIXRD, XANES, and EXAFS measurements were performed to analyze phase formation, crystal structure, and local structure of the films. The XANES data of the Hf L3-edge show no significant difference with respect to an increase in La content, indicating a considerable stability of the hafnium ion in the +4 oxidation state. Moreover, the EXAFS spectrum shows that the coordination number of Hf4+ is seven and the Hf–O bond length is ∼2.11 Å, which additionally confirms the formation of monoclinic HfO2 structure. The contributions of the second coordination shells, which are assigned to the Hf–Hf and Hf–La bonds, become well-structured with increasing La concentration in the HfO2 structure. However, the study suggests that the La-doped concentration affects the phase transformation from monoclinic to tetragonal and finally orthorhombic phase, leading to the presence of ferroelectric materials.Keywords: La-doped HfO2thin filmsphase transitionXANESEXAFS AcknowledgmentsThis work was supported by the Suranaree University of Technology (SUT) by Office of the Higher Education Commission under NRU Project of Thailand and Synchrotron Light Research Institute (Public Organization), SLRI, Thailand at BL 6A for all facilities and financial supports. The authors wish to thank the Synchrotron Light Research Institute for the provision of beamtime for GIXRD and XAS at BL1.1W. Dr. Prae Chirawatkul and Dr. Chatree Saiyasombat of BL1.1W are acknowledged for their fruitful discussion and assistance during the experiment. The figures in this article were created using Adobe Illustrator, SketchUp, BioRender, CaRIne v.3, and Microsoft PowerPoint.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.