{"title":"Non-proportionality of Light Yield of CeBr <sub>3</sub> Scintillator","authors":"S. Yonphan, W. Chaiphaksa, H. J. Kim, J. Kaewkhao","doi":"10.1080/10584587.2023.2234569","DOIUrl":null,"url":null,"abstract":"AbstractCerium bromide (CeBr3) scintillation crystal were studied and analyzed from the photon and electron response measurements. For photon response measurements, the radioactive source has been used for the energy range of 0.356 MeV ≤E≤ 1.332 MeV. The 137Cs source irradiated with gamma ray energy at 0.662 MeV was used for the electron response measurement using Compton coincidence technique. The variable angles (θ) would generate the gamma energies corresponding to a scattering angle of 30° to 120°. The results of number of photoelectron (Nphe) show responds to linear trends for photon and electron response. The light yield shows increase with increasing the photon and electron energy. The results showed the non-proportionality of photon response and electron response demonstrated good proportional properties of all energy ranges and as the result, the crystal is a promising candidate for gamma or X-rays detection.Keywords: Scintillation crystalnon-proportionalitylight yieldCeBr3 AcknowledgmentsThe authors would like to thank National Research Council of Thailand (NRCT) through the Research and Researchers for Industries (RRI) Ph.D. Program (NRCT5-RRI63015-P19) for funding this research. The authors express gratitude Thailand Science Research and Innovation (TSRI) for support supporting this research (Project number TSRI_66_9.2).Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"96 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234569","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractCerium bromide (CeBr3) scintillation crystal were studied and analyzed from the photon and electron response measurements. For photon response measurements, the radioactive source has been used for the energy range of 0.356 MeV ≤E≤ 1.332 MeV. The 137Cs source irradiated with gamma ray energy at 0.662 MeV was used for the electron response measurement using Compton coincidence technique. The variable angles (θ) would generate the gamma energies corresponding to a scattering angle of 30° to 120°. The results of number of photoelectron (Nphe) show responds to linear trends for photon and electron response. The light yield shows increase with increasing the photon and electron energy. The results showed the non-proportionality of photon response and electron response demonstrated good proportional properties of all energy ranges and as the result, the crystal is a promising candidate for gamma or X-rays detection.Keywords: Scintillation crystalnon-proportionalitylight yieldCeBr3 AcknowledgmentsThe authors would like to thank National Research Council of Thailand (NRCT) through the Research and Researchers for Industries (RRI) Ph.D. Program (NRCT5-RRI63015-P19) for funding this research. The authors express gratitude Thailand Science Research and Innovation (TSRI) for support supporting this research (Project number TSRI_66_9.2).Disclosure StatementNo potential conflict of interest was reported by the author(s).
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.