Reliability Assessment for Trust Integrated Circuit Al Interconnections at Elevated Temperatures

Bezopasnost'' Informacionnyh Tehnologij Pub Date : 2023-09-01 DOI:10.26583/bit.2023.3.08

Michael S. Afanasiev, Alexey V. Bespalov, Andrey A. Geraskin, Olga L. Golykova, Dmitry V. Kulikov, Alexandra A. Muravyeva, Dmitry O. Smirnov, Igor A. Kharitonov, Ruslan S. Shabardin

{"title":"Reliability Assessment for Trust Integrated Circuit Al Interconnections at Elevated Temperatures","authors":"Michael S. Afanasiev, Alexey V. Bespalov, Andrey A. Geraskin, Olga L. Golykova, Dmitry V. Kulikov, Alexandra A. Muravyeva, Dmitry O. Smirnov, Igor A. Kharitonov, Ruslan S. Shabardin","doi":"10.26583/bit.2023.3.08","DOIUrl":null,"url":null,"abstract":"The process of recrystallization occurring at temperature of +80°C in aluminum (Al) conductors of integrated circuits (IC) designed to operate in the range -40°C -+60°C has been studied experimentally by the method of cross sections obtained with a focused ion beam (FIB). Using the data of a comparative analysis of IC used in various operating conditions, the mechanism of electromigration caused by the supply of operating voltage to IC under the influence of elevated temperature was revealed. Defects, caused by the electromigration of the substance, which appeared as a result of recrystallization processes in the Al conductors of the IC, were investigated. The cause was determined and technological solutions were proposed to improve the reliability of Al conductors at elevated temperatures under conditions when it is impossible to change the technological process of the IC production. The obtained results can be used for the development of IC as well as in the educational programs related to the microelectronics and materials sciences.","PeriodicalId":53106,"journal":{"name":"Bezopasnost'' Informacionnyh Tehnologij","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bezopasnost'' Informacionnyh Tehnologij","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.26583/bit.2023.3.08","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

The process of recrystallization occurring at temperature of +80°C in aluminum (Al) conductors of integrated circuits (IC) designed to operate in the range -40°C -+60°C has been studied experimentally by the method of cross sections obtained with a focused ion beam (FIB). Using the data of a comparative analysis of IC used in various operating conditions, the mechanism of electromigration caused by the supply of operating voltage to IC under the influence of elevated temperature was revealed. Defects, caused by the electromigration of the substance, which appeared as a result of recrystallization processes in the Al conductors of the IC, were investigated. The cause was determined and technological solutions were proposed to improve the reliability of Al conductors at elevated temperatures under conditions when it is impossible to change the technological process of the IC production. The obtained results can be used for the development of IC as well as in the educational programs related to the microelectronics and materials sciences.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

高温下集成电路互连可靠性评估

用聚焦离子束(FIB)截面法研究了工作在-40°C ~ +60°C范围内的集成电路(IC)的铝(Al)导体在+80°C温度下的再结晶过程。通过对不同工作条件下集成电路的对比分析，揭示了工作电压在温度升高的影响下引起集成电路电迁移的机理。研究了在集成电路铝导体的再结晶过程中，由于物质的电迁移而引起的缺陷。在无法改变集成电路生产工艺的情况下，提出了提高高温下铝导体可靠性的技术解决方案。所得结果可用于集成电路的开发以及与微电子和材料科学相关的教育计划。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Bezopasnost'' Informacionnyh Tehnologij

自引率

0.00%

发文量