Effects of parasitic elements on L-type LC/CL matching circuits

IF 0.4 4区 计算机科学 Q4 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences Pub Date : 2023-01-01 DOI:10.1587/transfun.2023gcp0004
Satoshi Tanaka, Takeshi Yoshida, Minoru Fujishima
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Abstract

L-type LC/CL matching circuits are well known for their simple analytical solutions and have been applied to many radio-frequency (RF) circuits. When actually constructing a circuit, parasitic elements are added to inductors and capacitors. Therefore, each L and C element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the S11, voltage standing wave ratio (VSWR) and S21 characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.
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寄生元件对l型LC/CL匹配电路的影响
l型LC/CL匹配电路以其简单的解析解而闻名,并已应用于许多射频(RF)电路中。当实际构造电路时,寄生元件被添加到电感和电容器中。因此,每个L和C元件都有一个自谐振频率,影响匹配电路的特性。本文以电感并联寄生电容和电感串联寄生电容为寄生元件,详细报道了各元件的自谐振频率对S11、电压驻波比(VSWR)和S21特性的影响。当加入寄生元件时,随着自谐振频率的降低,各特性基本趋于恶化。然而,作为一个有趣的特征,我们发现谐振频率的组合决定了VSWR和通带特性,无论是电感还是电容。
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来源期刊
CiteScore
1.10
自引率
20.00%
发文量
137
审稿时长
3.9 months
期刊介绍: Includes reports on research, developments, and examinations performed by the Society''s members for the specific fields shown in the category list such as detailed below, the contents of which may advance the development of science and industry: (1) Reports on new theories, experiments with new contents, or extensions of and supplements to conventional theories and experiments. (2) Reports on development of measurement technology and various applied technologies. (3) Reports on the planning, design, manufacture, testing, or operation of facilities, machinery, parts, materials, etc. (4) Presentation of new methods, suggestion of new angles, ideas, systematization, software, or any new facts regarding the above.
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