{"title":"Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill","authors":"","doi":"10.56042/ijpap.v61i9.3491","DOIUrl":null,"url":null,"abstract":"Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).","PeriodicalId":0,"journal":{"name":"","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56042/ijpap.v61i9.3491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).
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