{"title":"Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?","authors":"","doi":"10.14738/tecs.115.15831","DOIUrl":null,"url":null,"abstract":"The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.","PeriodicalId":119801,"journal":{"name":"Transactions on Machine Learning and Artificial Intelligence","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions on Machine Learning and Artificial Intelligence","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14738/tecs.115.15831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.
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