{"title":"Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver","authors":"Hiromu Yamasaki, Katsuhiro Hata, Makoto Takamiya","doi":"10.1541/ieejjia.22007728","DOIUrl":null,"url":null,"abstract":"For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 °C to 125 °C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are + 4.9 °C / − 8.4 °C and + 1.1 A / − 4.3 A, respectively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are + 4.9 °C / − 8.1 °C and + 1.0 A / − 1.8 A, respectively.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1541/ieejjia.22007728","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 °C to 125 °C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are + 4.9 °C / − 8.4 °C and + 1.1 A / − 4.3 A, respectively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are + 4.9 °C / − 8.1 °C and + 1.0 A / − 1.8 A, respectively.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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