Carrier Decay Lifetimes in the Narrow-gap Hg1–xCdxTe at the Interband and Intraband Excitations

IF 0.6 Q4 PHYSICS, MULTIDISCIPLINARY Ukrainian Journal of Physics Pub Date : 2023-10-02 DOI:10.15407/ujpe68.8.543
S. Staryi, I. Lysjuk, O. Golenkov, Z. Tsybrii, S. Danilov, J. Gumenjuk-Sichevska, K. Andrieieva, M. Smolii, F. Sizov
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Abstract

The lifetimes of photoconductive decay carriers under interband and intraband excitations are studied in epitaxial layers of narrow-gap Hg1−xCdxTe (x ∼0.2). Samples with large distances (>3 mm) between small-area electrical contacts and small distances (∼10 μm) with largearea contacts (THz antennas) are studied. The lifetimes of decay carriers for intraband and interband excitations are measured and compared. It has been established that, in samples with n-type conductivity, the lifetimes are comparable (in the interval of 40 ns) for both methods of excitation. At the same time, in samples with a small distance between contacts and a large area (bow-tie antennas), contacts make the main contribution to recombination. The elimination of recombination at the contacts leads to a lifetime of ∼10−6 s.
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窄带Hg1-xCdxTe在带间和带内激发下的载流子衰减寿命
在窄间隙Hg1−xCdxTe (x ~ 0.2)外延层中研究了光导衰变载流子在带间和带内激发下的寿命。研究了小面积电触点之间的大距离(> 3mm)和小距离(~ 10 μm)与大面积触点(太赫兹天线)之间的样品。测量和比较了带内和带间激励下衰变载流子的寿命。已经确定,在具有n型电导率的样品中,两种激发方法的寿命是相当的(在40 ns的间隔内)。同时,在触点距离小、面积大的样品(领结天线)中,触点对复合起主要作用。在触点处消除复合导致寿命为~ 10−6 s。
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来源期刊
Ukrainian Journal of Physics
Ukrainian Journal of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
20.00%
发文量
244
期刊介绍: Ukrainian Journal of Physics is the general physics edition of the Department of Physics and Astronomy of the National Academy of Sciences of Ukraine. The journal publishes original papers and reviews in the fields of experimental and theoretical physics.
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