Optical Properties of CuCdS Thin Film Prepared by Vacuum Thermal Evaporation Technique

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234609
Montree Hankoy, Paramapat Treetornkeerati, Natasia Fungfuang, S. Tipawan Khlayboonme, Mettaya Kitiwan, Phacharaphon Tunthawiroon
{"title":"Optical Properties of CuCdS Thin Film Prepared by Vacuum Thermal Evaporation Technique","authors":"Montree Hankoy, Paramapat Treetornkeerati, Natasia Fungfuang, S. Tipawan Khlayboonme, Mettaya Kitiwan, Phacharaphon Tunthawiroon","doi":"10.1080/10584587.2023.2234609","DOIUrl":null,"url":null,"abstract":"AbstractThis study reports on the synthesis and characterizations of copper cadmium sulfide (CuCdS) thin films prepared using the vacuum thermal evaporation technique with copper sulfide and CdS as precursors in a 1:1 molar ratio. The structural properties of the thin films were analyzed using X-ray diffraction (XRD) which revealed that the main composition of the thin film was CdS with the preferred orientation of the (101) plane. The optical properties were examined using UV–Vis spectrophotometry. The photosensitivity of the films was determined using I–V measurements performed with a two-probe technique. The prepared CuCdS thin films have high optical transmittance of 92%.Keywords: CuCdSthermal evaporation techniqueoptical propertiesthin film AcknowledgmentsM. Hankoy would like to thank and appreciate Assoc. Prof. Dr. Thitinai Gaewdang and Assoc. Prof. Ngamnit Wongcharoen for imparting not only tremendous scientific knowledge but also genuine care and affection to the author.Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234609","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

AbstractThis study reports on the synthesis and characterizations of copper cadmium sulfide (CuCdS) thin films prepared using the vacuum thermal evaporation technique with copper sulfide and CdS as precursors in a 1:1 molar ratio. The structural properties of the thin films were analyzed using X-ray diffraction (XRD) which revealed that the main composition of the thin film was CdS with the preferred orientation of the (101) plane. The optical properties were examined using UV–Vis spectrophotometry. The photosensitivity of the films was determined using I–V measurements performed with a two-probe technique. The prepared CuCdS thin films have high optical transmittance of 92%.Keywords: CuCdSthermal evaporation techniqueoptical propertiesthin film AcknowledgmentsM. Hankoy would like to thank and appreciate Assoc. Prof. Dr. Thitinai Gaewdang and Assoc. Prof. Ngamnit Wongcharoen for imparting not only tremendous scientific knowledge but also genuine care and affection to the author.Disclosure StatementNo potential conflict of interest was reported by the author(s).
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
真空热蒸发法制备CuCdS薄膜的光学性质
摘要本文报道了以硫化铜和硫化镉为前驱体,以1:1的摩尔比,采用真空热蒸发技术制备硫化铜镉(CuCdS)薄膜的合成和表征。利用x射线衍射(XRD)分析了薄膜的结构性质,发现薄膜的主要成分是cd,取向为(101)面。用紫外可见分光光度法测定了其光学性质。利用双探针技术进行I-V测量,确定了薄膜的光敏性。制备的CuCdS薄膜具有92%的高透光率。关键词:cucd;热蒸发技术;光学特性;Hankoy感谢并感谢Assoc。Thitinai Gaewdang教授和Assoc。Ngamnit Wongcharoen教授不仅传授了丰富的科学知识,而且对作者的关怀和感情。披露声明作者未报告潜在的利益冲突。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
期刊最新文献
Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon Design of a Dual-Chamber Piezoelectric-Driven Micro Blower: Example of Heat Dissipation Use Modeling for Efficiency Enhancement of Perovskite Thin-Film Solar Cell by Using Double-Absorber and Buffer Layers Effect of Different Mn Doping Content on Electrical Properties of KNN Piezoelectric Ceramic Coatings Study on Safe Working Condition of the Electrothermal U-Shaped Actuator
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1