Improving light trapping abilities of double-textured AZO films via etching seed layers

Abstract

AbstractThe crater-nanorod-like double-textured ZnO:Al (AZO) transparent conducting films were prepared by combining wet-etching AZO seed layers and hydrothermal growing AZO nanorods. Different morphologies of the nanorod-like structures determined by the etching time of seed layers were observed. The influence of AZO seed layers etched for different times on the properties of double-textured AZO films was systematically compared and investigated, such as the structures, morphologies, optoelectronic properties and light-trapping abilities. The relationship between morphologies and light-trapping abilities of AZO nanorod-like structures grown on the etched seed layers was discussed. The crater-nanorod-like structures of double-textured AZO films with seed layers etched for 15 min not only maintained low resistance and high transmittance but also exhibited higher haze value, which are effective double-textured structures for improving light trapping.KEYWORDS: ZnOtransparent conducting filmslight trappingdouble-texturedoptoelectronic properties Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by the Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (grant number IOSKL2020KF15), the Natural Science Foundation of Liaoning Province, China (grant number 2019-ZD-0268).