Improvement of Luminescence Performance by the Addition of KF in the Eu 2 O 3 Doped Li 2 O-AlF 3 -NaF-P 2 O 5 Glass for Highly Efficient Reddish-Orange Laser Application
C.S. Sarumaha, J. Rajagukguk, N. Chanthima, R. Rajaramakrishna, J. Kaewkhao
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引用次数: 0
Abstract
Abstract One mol% of europium (Eu3+) with the addition of potassium fluoride in Li2O-AlF3-NaF-P2O5 glass has been prepared using a melt-quenching technique. The fluorescence properties of present glasses were studied by the physical properties, FTIR (Fourier transform infrared spectroscopy), absorption spectra, photoluminescence properties, radiative properties and photometric analysis. The physical properties were measured to know the compactness of the glasses. The structural behavior of groups PO4 and OH of the glasses was discussed through the FTIR spectra. From the FTIR spectra, the OH group of adding KF into the glass showed a low %T intensity due to the hydroxyl group that was consumed by the fluoride content, which confirms the low phonon energy. Using absorption spectra and Judd–Ofelt’s (J–O) theory, the J–O intensity parameters (Ω2, Ω4, and Ω6) and radiative emission properties of excited states of Eu3+ ions are calculated to confirm potential laser applications. Photoluminescence properties generated excitation, emission, and lifetime for the glasses. It is observed that the enhancement of the Eu3+ emission at 613 nm is because of the addition of potassium fluoride. It proved the lifetime associated with the transition from the 5D0 state to be a single exponential. The CIE (Commission International de I’Eclairage) chromaticity diagram estimated the CIE color coordinates and color purity of the prepared glasses. The UV lamp under wavelength at 365 nm achieved reddish-orange emissions, which is suitable for reddish-orange laser applications.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.