Silicon molecular beam epitaxy

Abstract

Work on silicon molecular beam epitaxy (Si-MBE) is now growing on a worldwide scale and various aspects of this work are here reviewed. Basic studies on surface cleaning and defect evaluation have been conducted to improve epitaxy and homoepitaxy and doping have been certified to be comparable or exceed those of conventional CVB epitaxial layers. Formation of doping superlattices is a prime example demonstrating the potential of Si-MBE over conventional growth techniques. Heteroepitaxy including combinations such as silicon/insulator and silicon/metal (silicide) has become an active and growing field for both basic research and device development.