L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova, E. A. Slapovskaya, A.V. Knyazev
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引用次数: 0
Abstract
A process for fabricating Zn-doped (up to 10 at %) β-Ga2O3 thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga2O3 films were studied by various methods.
期刊介绍：
High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.
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