Structure of Aluminum Films for the Creation of Tunnel Junctions

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Communications Technology and Electronics Pub Date : 2023-12-13 DOI:10.1134/s1064226923100157
M. V. Strelkov, A. M. Chekushkin, A. A. Lomov, S. V. Kraevskii, M. Yu. Fominskii, M. A. Tarasov
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Abstract

A series of studies of the structure of aluminum films deposited on single-crystal silicon substrates in different temperature regimes has been carried out. The roughness and grain size of 20-nm thick films of nuclei deposited at elevated temperatures and also dusted over the nucleus layer at room temperature to a thickness of 150 nm was studied using an atomic force microscope. The film profile was measured in an electron microscope. It is found that films on a hot sublayer turn out to be smoother, more rigid (less friable), and make it possible to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions with a higher current density and lower capacitance, respectively.

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用于创建隧道结的铝膜结构
摘要对不同温度条件下单晶硅衬底铝膜的结构进行了一系列研究。利用原子力显微镜研究了在高温下沉积的20 nm厚的核膜和在室温下覆盖在核层上至150 nm厚的核膜的粗糙度和晶粒尺寸。在电子显微镜下测量了薄膜的轮廓。研究发现,热亚层上的薄膜变得更光滑,更刚性(更不易碎),并且可以期望产生具有更高电流密度和更低电容的超导体-绝缘体-超导体和超导体-绝缘体-正常金属转变。
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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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