Effect of a negative DC bias on a capacitively coupled Ar plasma operated at different radio frequency voltages and gas pressures

Pub Date : 2023-12-22 DOI:10.1088/2058-6272/ad1875
Yaojun Xiang, Xiao-Kun Wang, Yongxin Liu, Younian Wang
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Abstract

Effect of a negative direct current (DC) bias,|Vdc|, on the electrical parameters and discharge mode is investigated experimentally in a radio frequency (RF) capacitively coupled Ar plasma operated at different RF voltage amplitudes and different gas pressures. The electron density is measured by using a hairpin probe and the spatio-temporal distribution of electron-impact excitation rate is determined by phase-resolved optical emission spectroscopy, and the electrical parameters are obtained based on the waveforms of the electrode voltage and the plasma current measured by a voltage and current probe. It was found that at a low |Vdc|, i.e., in α mode, the electron density and the RF current decline with increasing |Vdc|, and meanwhile, the plasma impedance becomes more capacitive, due to a widened sheath. So, the RF power deposition is suppressed. When |Vdc| exceeds a certain value, the plasma turns into α-γ hybrid mode (or the discharge becomes dominated by the γ-mode), manifesting a drastically-growing electron density and a moderately-increasing RF current. Meanwhile, the plasma impedance becomes more resistive, so the RF power deposition is enhanced with |Vdc|. Besides, we found that the electrical parameters show similar dependence on |Vdc| at different RF voltages, and the α-γ mode transition occurs at a lower |Vdc| at a higher RF voltage. By increasing the pressure, the plasma impedance becomes more resistive, so the RF power deposition and the electron density are enhanced. Especially, the α-γ mode transition tends to occur at a lower |Vdc| with the increase of the pressure.
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负直流偏压对在不同射频电压和气体压力下运行的电容耦合氩等离子体的影响
实验研究了在不同射频电压幅值和不同气体压力下运行的射频电容耦合氩等离子体中,负直流偏压|Vdc|对电学参数和放电模式的影响。使用发夹探针测量了电子密度,通过相位分辨光学发射光谱测定了电子撞击激发率的时空分布,并根据电压和电流探针测量的电极电压和等离子体电流波形获得了电参数。研究发现,在低|Vdc|下,即在α模式下,电子密度和射频电流随着|Vdc|的增大而下降,同时,由于鞘变宽,等离子体阻抗变得更加容性。因此,射频功率沉积受到抑制。当|Vdc|超过一定值时,等离子体转为α-γ混合模式(或放电以γ模式为主),电子密度急剧增加,射频电流适度增加。同时,等离子体的阻抗变得更强,因此射频功率沉积随|Vdc|而增强。此外,我们还发现在不同的射频电压下,电参数对|Vdc|的依赖性相似,并且在较高的射频电压下,α-γ 模式转换发生在较低的|Vdc|上。通过增加压力,等离子体阻抗变得更强,因此射频功率沉积和电子密度都得到了提高。特别是,随着压力的增加,α-γ 模式转换往往发生在较低的 |Vdc|处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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