Modulation of insulator metal transition of VO₂ films grown on Al2O3 (001) and TiO2 (001) substrates by the crystallization of capping Ge2Sb2Te5 layer

IF 2.7 3区物理与天体物理 Q2 PHYSICS, APPLIED Journal of Applied Physics Pub Date : 2023-12-22 DOI:10.1063/5.0176810

Takuto Ohnuki, K. Okimura, Reki Nakamoto, Yuji Muraoka, Joe Sakai, Masashi Kuwahara

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Abstract

We demonstrate modulation of insulator metal transition (IMT) of VO2 films grown on single crystalline substrates through the effect of in-plane compression with crystallization of capping chalcogenide layer on the targeted VO2 films. Chalcogenide germanium–antimony–telluride (Ge2Sb2Te5: GST), which shows large volume reduction of 6.8% with its phase change from amorphous to crystal, was deposited on VO2 films grown on Al2O3 (001) and TiO2 (001) substrates, where V–V atoms along the cR-axis in the tetragonal VO2 phase align parallel and perpendicular to the substrate surfaces, respectively. As a result, counter shifts in temperature-dependence of resistance characteristics, to lower and higher directions, were observed for VO2 films on Al2O3 (001) and TiO2 (001), consistent with the lattice modulation of VO2 films by the in-plane compression introduced by GST crystallization. The obtained results open a way to realize large resistance change of IMT under constant temperature by controlling GST phases.

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封盖 Ge2Sb2Te5 层的结晶对生长在 Al2O3 (001) 和 TiO2 (001) 基质上的 VO₂ 薄膜绝缘体金属转变的调制

我们展示了在单晶基底上生长的 VO2 薄膜的绝缘体金属转变（IMT）的调制过程，其方法是在目标 VO2 薄膜上进行面内压缩并使覆盖的锗锑碲化物层结晶。在 Al2O3 (001) 和 TiO2 (001) 基底上生长的 VO2 薄膜上沉积了卤化锗-锑-碲化物（Ge2Sb2Te5：GST），该化合物在从非晶到晶体的相变过程中体积缩小了 6.8%，其中四方 VO2 相中沿 cR 轴的 V-V 原子分别平行和垂直于基底表面排列。因此，在 Al2O3 (001) 和 TiO2 (001) 上的 VO2 薄膜上观察到电阻特性的温度依赖性向低方向和高方向反向移动，这与 GST 结晶带来的面内压缩对 VO2 薄膜的晶格调节是一致的。这些结果为通过控制 GST 相来实现恒温条件下 IMT 的大电阻变化开辟了一条途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Applied Physics 物理-物理：应用

CiteScore

5.40

自引率

9.40%

发文量

1534

审稿时长

2.3 months

期刊介绍： The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces