Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor

Abstract

This paper presents beta‐gallium oxide (β‐Ga2O3) Micro Electro Mechanical Systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone Bridge configuration. The MEMS model was simulated from 0 Pa to 50 kPa, resulting in an output signal range of ‐3 mV to 16 mV and a responsivity of 0.38 mV/kPa. Our simulation also showed that as temperature increased, the resistance of the piezoresistive material in the MEMS decreased, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone Bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga2O3‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future.This article is protected by copyright. All rights reserved.