Relaxation-time limits of global solutions in full quantum hydrodynamic model for semiconductors

Abstract

This paper is concerned with the global well-posedness and relaxation-time limits for the solutions in the full quantum hydrodynamic model, which can be used to analyze the thermal and quantum influences on the transport of carriers in semiconductor devices. For the Cauchy problem in ℝ³, we prove the global existence, uniqueness and exponential decay estimate of smooth solutions, when the initial data are small perturbations of an equilibrium state. Moreover, we show that the solutions converge into that of the simplified quantum energy-transport model and the quantum drift-diffusion model for the moment relaxation limit, and the moment and energy relaxation limit, respectively.