Yue-Yue Tian, Bo-Yuan Ning, Hui-Fen Zhang, Xi-Jing Ning
{"title":"Equation of state for tungsten obtained by direct solving the partition function","authors":"Yue-Yue Tian, Bo-Yuan Ning, Hui-Fen Zhang, Xi-Jing Ning","doi":"10.1063/5.0186229","DOIUrl":null,"url":null,"abstract":"Utilization of metal tungsten (W) as the structural material or pressure scale requires accurate knowledge of the equation of state (EOS), which is far beyond the available experimental measurements. In the present work, a direct integral approach (DIA) with ultrahigh efficiency was applied to calculate the EOS of W up to 500 GPa and 3000 K with ab initio calculations. Compared with previous static compression experiments up to 150 GPa under room temperature and 35 GPa at high temperatures up to 1673 K, all the deviations of the calculated pressure are within or comparable to the uncertainty of experiments. Predictions for higher-temperature and simultaneously higher-pressure EOS up to 300 GPa and 3000 K differ slightly from the comprehensive analysis by Litasov et al. [J. Appl. Phys. 113, 133505 (2013)] via fitting available experimental data with the empirical equation. These results indicate that the EOS of crystal W obtained from DIA should be convincible, and DIA without any empirical or artificial parameters may find its wide applications for predicting thermodynamic properties of condensed matter in the future.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"70 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0186229","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Utilization of metal tungsten (W) as the structural material or pressure scale requires accurate knowledge of the equation of state (EOS), which is far beyond the available experimental measurements. In the present work, a direct integral approach (DIA) with ultrahigh efficiency was applied to calculate the EOS of W up to 500 GPa and 3000 K with ab initio calculations. Compared with previous static compression experiments up to 150 GPa under room temperature and 35 GPa at high temperatures up to 1673 K, all the deviations of the calculated pressure are within or comparable to the uncertainty of experiments. Predictions for higher-temperature and simultaneously higher-pressure EOS up to 300 GPa and 3000 K differ slightly from the comprehensive analysis by Litasov et al. [J. Appl. Phys. 113, 133505 (2013)] via fitting available experimental data with the empirical equation. These results indicate that the EOS of crystal W obtained from DIA should be convincible, and DIA without any empirical or artificial parameters may find its wide applications for predicting thermodynamic properties of condensed matter in the future.
利用金属钨(W)作为结构材料或压力标尺,需要准确了解其状态方程(EOS),而这远远超出了现有的实验测量结果。在本研究中,我们采用了一种具有超高效率的直接积分法(DIA),通过ab initio计算,计算出了高达500 GPa和3000 K的钨状态方程。与之前室温下最高 150 GPa 和 1673 K 高温下最高 35 GPa 的静态压缩实验相比,计算压力的所有偏差都在实验的不确定性范围之内或与之相当。Litasov 等人[J. Appl. Phys.这些结果表明,通过 DIA 得到的晶体 W 的 EOS 应该是可信的,而不带任何经验参数或人工参数的 DIA 在未来预测凝聚态物质的热力学性质方面可能会有广泛的应用。
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
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Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
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Physics of materials, including electrical, thermal, mechanical and other properties-
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Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces