Exploring topological phase transition in Pt2Hg1−xTlxSe3

Deergh Bahadur Shahi, Dipak Bhattarai, Madhav Prasad Ghimire
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Abstract

The transition from trivial to non-trivial phase in two-dimensional materials are called a topological phase transition (TPT). The Berry phase, non-local string order parameter, and edge states define the topological nature of the system. A newly discovered jacutingaite ma- terial Pt2HgSe3 is a layered material which occurs naturally in the form of minerals. The material can be exfoliated and was predicted as a quantum spin Hall insulator. Here, on the basis of density functional theory and tight-binding calculations, we explore Pt2Hg1−xTlxSe3 (x = 0.25, 0.50, 0.75, 1) to understand the electronic and topological properties. We start with the parent material Pt2HgSe3 wherein Hg is replaced partially with x amount of Tl, to tune the topological phases. From the electronic structure calculations, Pt2HgSe3 is found to be a non-trivial semimetal in it’s bulk. Upon electron doping, the material transforms to strong topological metallic phase. The topological Z2 invariant calculation shows TPT in Pt2Hg1−xTlxSe3 with weak topological insulating state (0;001) for x=0, to strong topological metal (1;000) for x=1, respectively.
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探索 Pt2Hg1-xTlxSe3 中的拓扑相变
二维材料中从三相到非三相的转变被称为拓扑相变(TPT)。贝里相、非局部弦阶参数和边缘状态决定了系统的拓扑性质。新发现的黝帘石材料 Pt2HgSe3 是一种以矿物形式自然存在的层状材料。这种材料可以剥离,并被预测为量子自旋霍尔绝缘体。在此,我们以密度泛函理论和紧密结合计算为基础,探讨了 Pt2Hg1-xTlxSe3 (x = 0.25、0.50、0.75、1),以了解其电子和拓扑特性。我们从母体材料 Pt2HgSe3 开始,用 x 量的 Tl 替代部分 Hg,以调整拓扑相。通过电子结构计算,我们发现 Pt2HgSe3 在其本体中是一种非三价半金属。掺入电子后,该材料转变为强拓扑金属相。拓扑 Z2 不变量计算显示,Pt2Hg1-xTlxSe3 中的 TPT 分别为 x=0 时的弱拓扑绝缘态(0;001)和 x=1 时的强拓扑金属态(1;000)。
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