Substrate effects on surface activation processes of graphene/metal composite photocathodes

Song Tang, Yijun Zhang, G. Jiao, Feng Shi, Dongzhi Wang, Zehao Tong, Yu Jiang, Guanghui Hao
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Abstract

Graphene is considered a suitable atomically thick layer on photocathodes, and the photoemission performance of the graphene-covered photocathodes can be enhanced through Cs/O activation. To investigate the effects of the substrate materials beneath the graphene layer on Cs/O deposition and photoemission performance. We compare the activation processes and photoemission performances of few-layer graphene supported by nickel and copper to investigate the effects of the substrate materials beneath the graphene layer on Cs/O deposition and photoemission performance. By Cs/O activation, the nickel-supported few-layer graphene can possess a higher response at 405 nm, while the copper-supported cathode can acquire a wider spectral response and better stability. After degradation, we discover that the samples supported by nickel and copper can act differently through the additional Cs/O deposition processes, while the surface barrier heights of both samples are further decreased.
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基底对石墨烯/金属复合光电阴极表面活化过程的影响
石墨烯被认为是光电阴极上合适的原子厚层,石墨烯覆盖的光电阴极的光发射性能可通过 Cs/O 活化得到增强。为了研究石墨烯层下的基底材料对 Cs/O 沉积和光发射性能的影响。我们比较了镍和铜支撑的少层石墨烯的活化过程和光致发光性能,以研究石墨烯层下的衬底材料对 Cs/O 沉积和光致发光性能的影响。通过 Cs/O 活化,镍支撑的几层石墨烯在 405 纳米波长处具有更高的响应,而铜支撑的阴极则能获得更宽的光谱响应和更好的稳定性。降解后,我们发现镍和铜支持的样品在额外的 Cs/O 沉积过程中会产生不同的作用,同时两种样品的表面势垒高度都会进一步降低。
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