The Discovery of the Universal Mass-Energy Equivalence Relation in Materials Having a Bandgap

D. R. K. Chanana
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Abstract

: This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.
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在具有带隙的材料中发现通用质量-能量等效关系
:这篇文章介绍了普遍质能方程关系的发现过程,并以表格形式列出了不同半导体的高、中、低压金属氧化物半导体场效应晶体管(MOSFET),这些器件可以是 n 沟道器件,也可以是 p 沟道器件。表中列出的 MOSFET 需要考虑一些要点。通用的质能等价关系为 dE/E = dm/m,其中 E 为能量,m 为质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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