Cu2O/ZnO heterojunction self-powered photodetector performance regulation

Siyuan Li, Man Zhao, Dayong Jiang, Mingyang Li, Meijiao Wang, Yanyan Peng, Jingda Gu
{"title":"Cu2O/ZnO heterojunction self-powered photodetector performance regulation","authors":"Siyuan Li, Man Zhao, Dayong Jiang, Mingyang Li, Meijiao Wang, Yanyan Peng, Jingda Gu","doi":"10.1116/6.0003274","DOIUrl":null,"url":null,"abstract":"Self-powered photodetectors, requiring no external bias, offer distinct advantages that render them ideal for a broad spectrum of applications. Efficient carrier separation and collection stand as foundational elements in the operation of these photodetectors. In this study, we delve into the refinement of Cu2O/ZnO heterojunction photodetectors. By varying the thickness of the ZnO layer, we controlled the separation and capture of carriers at the heterojunction, thus achieving adjustable photodetector performance. Our experimental findings reveal pronounced performance trends related to different wavelength bands, with particular significance in the ultraviolet and visible exploration. We observe a distinctive pattern marked by an initial performance increase followed by a subsequent decline. This intriguing phenomenon implies that meticulous control over carrier separation and collection within the heterojunction can be realized by fine-tuning the transmission distance, ultimately allowing us to adjust the photodetector’s responsivity.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Self-powered photodetectors, requiring no external bias, offer distinct advantages that render them ideal for a broad spectrum of applications. Efficient carrier separation and collection stand as foundational elements in the operation of these photodetectors. In this study, we delve into the refinement of Cu2O/ZnO heterojunction photodetectors. By varying the thickness of the ZnO layer, we controlled the separation and capture of carriers at the heterojunction, thus achieving adjustable photodetector performance. Our experimental findings reveal pronounced performance trends related to different wavelength bands, with particular significance in the ultraviolet and visible exploration. We observe a distinctive pattern marked by an initial performance increase followed by a subsequent decline. This intriguing phenomenon implies that meticulous control over carrier separation and collection within the heterojunction can be realized by fine-tuning the transmission distance, ultimately allowing us to adjust the photodetector’s responsivity.
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Cu2O/ZnO 异质结自供电光电探测器的性能调节
自供电光电探测器无需外部偏压,具有独特的优势,是各种应用的理想之选。高效的载流子分离和收集是这些光电探测器运行的基本要素。在本研究中,我们深入研究了 Cu2O/ZnO 异质结光电探测器的改进。通过改变氧化锌层的厚度,我们控制了异质结上载流子的分离和捕获,从而实现了可调节的光电探测器性能。我们的实验结果揭示了与不同波段相关的明显性能趋势,尤其是在紫外线和可见光探测方面。我们观察到一种独特的模式,其特点是最初性能提高,随后性能下降。这一有趣的现象意味着,通过微调传输距离,可以实现对异质结内载流子分离和收集的精细控制,最终使我们能够调整光电探测器的响应率。
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