O. N. Gorshkov, D. O. Filatov, M. N. Koriazhkina, V. A. Lobanova, M. A. Riabova
{"title":"Effect of Noise on Resistive Switching of an Yttria Stabilized Zirconia Based Memristor","authors":"O. N. Gorshkov, D. O. Filatov, M. N. Koriazhkina, V. A. Lobanova, M. A. Riabova","doi":"10.1134/s1063776123110031","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The effect of Gaussian noise on the switching of a ZrO<sub>2</sub>(Y) based memristor from the low resistance state (LRS) into the high resistance state (HRS) including transitions from the LRS into intermediate metastable states has been studied. The series of positive (with addition of the noise signal or without the one) and negative rectangular voltage pulses were used as the switching signals. The adding of noise to the switching signal initiated the switching of the memristor from the LRS into the HRS at smaller pulse magnitudes than in the case of switching by the rectangular pulses without adding the noise. A necessary (preset) HRS can be achieved passing the intermediate states by adding the noise with certain parameters to the rectangular switching pulses. The resistive switching is performed without application of adaptive switching protocols. The results of the present study can be applied in the development of innovative memristor switching protocols.</p>","PeriodicalId":629,"journal":{"name":"Journal of Experimental and Theoretical Physics","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Experimental and Theoretical Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063776123110031","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of Gaussian noise on the switching of a ZrO2(Y) based memristor from the low resistance state (LRS) into the high resistance state (HRS) including transitions from the LRS into intermediate metastable states has been studied. The series of positive (with addition of the noise signal or without the one) and negative rectangular voltage pulses were used as the switching signals. The adding of noise to the switching signal initiated the switching of the memristor from the LRS into the HRS at smaller pulse magnitudes than in the case of switching by the rectangular pulses without adding the noise. A necessary (preset) HRS can be achieved passing the intermediate states by adding the noise with certain parameters to the rectangular switching pulses. The resistive switching is performed without application of adaptive switching protocols. The results of the present study can be applied in the development of innovative memristor switching protocols.
期刊介绍：
Journal of Experimental and Theoretical Physics is one of the most influential physics research journals. Originally based on Russia, this international journal now welcomes manuscripts from all countries in the English or Russian language. It publishes original papers on fundamental theoretical and experimental research in all fields of physics: from solids and liquids to elementary particles and astrophysics.
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