{"title":"Electron emission properties of titanium nitride coated volcano-structured silicon emitters","authors":"H. Murata, K. Murakami, Masayoshi Nagao","doi":"10.1116/6.0003234","DOIUrl":null,"url":null,"abstract":"Volcano-structured field emitter arrays (FEAs) have achieved high-beam focusing and have been applied in electron beam lithography and image sensors. However, high current operation on the order of milliamperes is necessary for applications such as x-ray sources and traveling wave tubes. Thus, this study applied a TiN coating to a volcano-structured Si-FEA, which has a high melting point favorable for high-current operation. Transmission electron microscopy and x-ray photoelectron spectroscopy revealed that TiN was uniformly deposited on the Si tip by DC magnetron sputtering with the atomic ratio of Ti to N being 1:1. The TiN-coated volcano-structured FEA exhibited excellent electron emission property (7.7 mA/1027 tips) and an electron emission stability of >6 mA for 60 min in pulse operation. These results are expected to aid in the development of next-generation electron sources that can realize high-current operations under high-beam-focusing conditions.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"22 46","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Volcano-structured field emitter arrays (FEAs) have achieved high-beam focusing and have been applied in electron beam lithography and image sensors. However, high current operation on the order of milliamperes is necessary for applications such as x-ray sources and traveling wave tubes. Thus, this study applied a TiN coating to a volcano-structured Si-FEA, which has a high melting point favorable for high-current operation. Transmission electron microscopy and x-ray photoelectron spectroscopy revealed that TiN was uniformly deposited on the Si tip by DC magnetron sputtering with the atomic ratio of Ti to N being 1:1. The TiN-coated volcano-structured FEA exhibited excellent electron emission property (7.7 mA/1027 tips) and an electron emission stability of >6 mA for 60 min in pulse operation. These results are expected to aid in the development of next-generation electron sources that can realize high-current operations under high-beam-focusing conditions.
火山结构场发射器阵列（FEA）实现了高光束聚焦，并已应用于电子束光刻和图像传感器。然而，在 X 射线源和行波管等应用中，需要毫安级的大电流运行。因此，本研究将 TiN 涂层应用于火山结构的 Si-FEA，其熔点高，有利于大电流操作。透射电子显微镜和 X 射线光电子能谱显示，TiN 是通过直流磁控溅射均匀沉积在硅尖端的，Ti 与 N 的原子比为 1:1。涂有 TiN 的火山结构 FEA 表现出优异的电子发射特性（7.7 mA/1027个尖端），在脉冲操作中，电子发射稳定性大于 6 mA，持续 60 分钟。这些结果有望帮助开发新一代电子源，实现高光束聚焦条件下的大电流运行。
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