The effect of cerebellar TMS on error processing: A combined single-pulse TMS and ERP study

Adam Berlijn, Dana M. Huvermann, S. Groiss, Alfons Schnitzler, Manfred Mittelstaedt, Christian Bellebaum, Dagmar Timmann, Martina Minnerop, Jutta Peterburs
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Abstract

Abstract The present study investigated temporal aspects of cerebellar contributions to the processing of performance errors as indexed by the error-related negativity (ERN) in the response-locked event-related potential (ERP). We co-registered EEG and applied single-pulse transcranial magnetic stimulation (spTMS) to the left posterolateral cerebellum and an extra-cerebellar control region (vertex) while healthy adult volunteers performed a Go/Nogo Flanker Task. In Go trials, TMS pulses were applied at four different time points, with temporal shifts of -100 ms, -50 ms, 0 ms, or +50 ms relative to the individual error latency (IEL, i.e., individual ERN peak latency + median error response time). These stimulation timings were aggregated into early (-100 ms, -50 ms) and late (0 ms, +50 ms) stimulation for the analysis. In Nogo trials, TMS pulses occurred 0 ms, 100 ms, or 300 ms after stimulus onset. Mixed linear model analyses revealed that cerebellar stimulation did not affect error rates overall. No effects were found for response times. As hypothesized, ERN amplitudes were decreased for cerebellar stimulation. No significant differences were found for the error positivity (Pe). Similar to TMS application to probe cerebellar-brain inhibition in the motor domain, the inhibitory tone of the cerebellar cortex may have been disrupted by the pulses. Reduced inhibitory output of the cerebellar cortex may have facilitated the processing of error information for response selection, which is reflected in a decreased ERN.
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小脑经颅磁刺激对错误处理的影响:单脉冲 TMS 和 ERP 联合研究
摘要 本研究调查了小脑对成绩错误处理所做贡献的时间方面,并以反应锁定事件相关电位(ERP)中的错误相关负性(ERN)作为指标。我们对脑电图进行了同步注册,并在健康成年志愿者执行 Go/Nogo Flanker 任务时对左侧小脑后外侧和小脑外控制区(顶点)施加了单脉冲经颅磁刺激(spTMS)。在Go试验中,在四个不同的时间点施加TMS脉冲,相对于个体错误潜伏期(IEL,即个体ERN峰值潜伏期+中位错误反应时间)的时间偏移分别为-100毫秒、-50毫秒、0毫秒或+50毫秒。这些刺激时间被汇总为早期(-100 毫秒,-50 毫秒)和晚期(0 毫秒,+50 毫秒)刺激进行分析。在 Nogo 试验中,TMS 脉冲发生在刺激开始后 0 毫秒、100 毫秒或 300 毫秒。混合线性模型分析表明,小脑刺激不会影响总体错误率。对反应时间也没有影响。正如假设的那样,小脑刺激会降低 ERN 振幅。在错误阳性率(Pe)方面没有发现明显差异。与应用经颅磁刺激探查运动领域的小脑-大脑抑制类似,小脑皮层的抑制音可能受到了脉冲的干扰。小脑皮层抑制性输出的减少可能促进了用于反应选择的错误信息的处理,这反映在ERN的减少上。
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