A-Site Order-Disorder Evolution in Double Manganites RBaMn2O6 (R = Pr, Nd)

IF 1.1 4区 材料科学 Q3 METALLURGY & METALLURGICAL ENGINEERING Physics of Metals and Metallography Pub Date : 2024-02-05 DOI:10.1134/s0031918x23602421
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Abstract

Structural, magnetic and optical properties of double manganites PrBaMn2O6 and NdBaMn2O6 are studied depending on the degree of ordering in the A-position. It is shown that, annealing induced disordering goes in an initial stage throw formation of a two-phase state: a phase with a high A-site ordering with TC ∼ 280–300 K and a phase with a low ordering of ~30% with significantly lower TC coexist. In partially ordered PrBaMn2O6 samples there are metal-insulator transitions near TC of the each coexisting phases. In partially ordered NdBaMn2O6 in a highly A-site ordered high-temperature phase, there is no metal-insulator transition due to the destruction of the channels for metallic conductivity formed by the ordering of the x2y2 orbitals. If a metal-insulator transition takes place, the application of a magnetic field leads to the effect of magnetotransmission near TC, which is associated with a change in the concentration of delocalized charge carriers.

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双锰矿 RBaMn2O6(R = Pr、Nd)中的 A 位有序-无序演化
摘要 根据 A 位有序程度,研究了双锰矿 PrBaMn2O6 和 NdBaMn2O6 的结构、磁性和光学特性。研究表明,退火诱导的无序化在初始阶段会形成两相状态:TC ∼ 280-300 K 的高 A 位有序相和 TC 明显降低的约 30% 的低有序相共存。在部分有序的 PrBaMn2O6 样品中,每种共存相的 TC 附近都存在金属-绝缘体转变。在部分有序的 NdBaMn2O6 高温相中,由于 x2-y2 轨道有序化所形成的金属导电通道被破坏,因此不存在金属-绝缘体转变。如果发生了金属-绝缘体转变,则磁场的应用会导致 TC 附近的磁传递效应,这与脱局域电荷载流子浓度的变化有关。
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来源期刊
Physics of Metals and Metallography
Physics of Metals and Metallography 工程技术-冶金工程
CiteScore
2.00
自引率
25.00%
发文量
108
审稿时长
3 months
期刊介绍: The Physics of Metals and Metallography (Fizika metallov i metallovedenie) was founded in 1955 by the USSR Academy of Sciences. Its scientific profile involves the theory of metals and metal alloys, their electrical and magnetic properties, as well as their structure, phase transformations, and principal mechanical properties. The journal also publishes scientific reviews and papers written by experts involved in fundamental, application, and technological studies. The annual volume of publications amounts to some 250 papers submitted from 100 leading national scientific institutions.
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