Comprehensive Review on CdTe Crystals: Growth, Properties, and Photovoltaic Application

IF 1.1 4区 材料科学 Q3 METALLURGY & METALLURGICAL ENGINEERING Physics of Metals and Metallography Pub Date : 2024-02-05 DOI:10.1134/s0031918x2110094x
Bibin John, S. Varadharajaperumal
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Abstract

Despite the deep interest of materials scientists in cadmium telluride (CdTe) crystal growth, there is no single source to which the researchers can turn towards for comprehensive knowledge of CdTe compound semiconductor synthesis protocols, physical properties and performance. Considering this, the present review work focuses to bridge this shortcoming. The direct band gap (Eg) CdTe crystals have been in limelight in photovoltaic application (PV) since the optoelectronic properties such as Eg (1.49 eV), absorption coefficient (~105 cm–1), p-type conductivity, carrier concentration (6 × 1016 cm–3) and mobility (1040 cm2/(V s)) at the room temperature are reported that optimum for solar cells. Additionally, Cd-based compounds such as CdTe and CdZnTe have also been widely studied in the field of α and γ-ray radiation detector, because of their extraordinary advantages like large atomic number, low weight, high mechanical hardness, flexibility, and the availability of the constituent materials. CdTe has demerits like toxicity and high melting temperature, which will complicate the growth of stoichiometric cadmium telluride crystals at high temperatures. In this regard, the review work focused the periodic evolution of the growth protocols until now. The different synthesis methods, characterization, and recent progress in the field of crystalline CdTe were discussed briefly. Important optical and electrical characteristics are presented in the tables and remaining issues have discussed, this could be looked into for further research. The applications of CdTe crystals for photovoltaic fields are also discussed in this review paper.

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碲化镉晶体综述:碲化镉晶体:生长、特性和光伏应用综述
摘要尽管材料科学家对碲化镉(CdTe)晶体生长有着浓厚的兴趣,但研究人员却没有一个可以全面了解碲化镉化合物半导体合成协议、物理性质和性能的单一来源。有鉴于此,本综述旨在弥补这一不足。直接带隙(Eg)碲化镉晶体一直是光伏应用(PV)领域的焦点,因为其光电特性,如 Eg(1.49 eV)、吸收系数(~105 cm-1)、p 型电导率、室温下的载流子浓度(6 × 1016 cm-3)和迁移率(1040 cm2/(V s)),均被报道为太阳能电池的最佳特性。此外,CdTe 和 CdZnTe 等镉基化合物也因其原子序数大、重量轻、机械硬度高、柔韧性好、组成材料易得等非凡优势,在 α 和 γ 射线辐射探测器领域得到了广泛研究。碲化镉具有毒性和高熔点等缺点,这将使碲化镉晶体在高温下的生长变得复杂。有鉴于此,本综述着重介绍了迄今为止生长规程的周期性演变。简要讨论了晶体碲化镉的不同合成方法、表征和最新进展。表格中列出了重要的光学和电学特性,并讨论了剩余的问题,以便进一步研究。本文还讨论了碲化镉晶体在光伏领域的应用。
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来源期刊
Physics of Metals and Metallography
Physics of Metals and Metallography 工程技术-冶金工程
CiteScore
2.00
自引率
25.00%
发文量
108
审稿时长
3 months
期刊介绍: The Physics of Metals and Metallography (Fizika metallov i metallovedenie) was founded in 1955 by the USSR Academy of Sciences. Its scientific profile involves the theory of metals and metal alloys, their electrical and magnetic properties, as well as their structure, phase transformations, and principal mechanical properties. The journal also publishes scientific reviews and papers written by experts involved in fundamental, application, and technological studies. The annual volume of publications amounts to some 250 papers submitted from 100 leading national scientific institutions.
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