{"title":"A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications","authors":"Arulpriya Shanmugam, Kumar Ponnusamy","doi":"10.1080/00207217.2024.2312558","DOIUrl":null,"url":null,"abstract":"The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"9 1","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/00207217.2024.2312558","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...
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