{"title":"Novel dual power hybrid write operation structure for STT-MRAM","authors":"Xiangjian Jia, Guanxi Cheng, Guangjun Zhang, Yanfeng Jiang","doi":"10.1080/00207217.2024.2312562","DOIUrl":null,"url":null,"abstract":"Due to the inherent physical characteristics and the influence of process variation, the write operation in the 1T–1 R STT-MRAM bit-cell shows critical issues of asymmetric and stochastic. In the p...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"89 1","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/00207217.2024.2312562","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Due to the inherent physical characteristics and the influence of process variation, the write operation in the 1T–1 R STT-MRAM bit-cell shows critical issues of asymmetric and stochastic. In the p...
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