{"title":"Judd–Ofelt Analysis of Barium Zirconate Doped with Various Concentrations of Europium (III)","authors":"Ravi Shrivastava","doi":"10.1080/10584587.2023.2296327","DOIUrl":null,"url":null,"abstract":"A perovskite material, Barium Zirconate (BZO) doped with 0.5, 1.0, 1.5, 2.0, 2.5 and 3.0 mol% of Europium (III) were prepared using a solid-state reaction technique. X-ray diffraction (XRD) pattern...","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"97 1","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2296327","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A perovskite material, Barium Zirconate (BZO) doped with 0.5, 1.0, 1.5, 2.0, 2.5 and 3.0 mol% of Europium (III) were prepared using a solid-state reaction technique. X-ray diffraction (XRD) pattern...
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.