An adaptive energy regulation in a memristive map linearized from circuit with two memristive channels

Feifei Yang, Ping Zhou, Jun Ma
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Abstract

The nonlinear circuits can show multistability when magnetic flux-dependent memristor (MFDM) or charge-sensitive memristor (CSM) is incorporated into one branch circuit, which is helpful for estimating magnetic or electric field effects. In this paper, two different kinds of memristors are incorporated into two branch circuits composed of a capacitor and a nonlinear resistor, thus a memristive circuit with double memristive channels is designed. The circuit equations are presented, and the dynamics in this oscillator with two memristive terms are discussed. Then the memristive oscillator is converted into a memristive map by applying linear transformation on the sampled time series for memristive oscillator. The Hamilton energy function for the memristive oscillator is obtained by using the Helmholtz theorem, and it can be mapped from the field energy of the memristive circuit. An energy function for the dual memristive map is suggested by imposing suitable weights on the discrete energy function. The dynamical behaviors of the new memristive map are investigated, and an adaptive law is proposed to regulate the firing mode in the memristive map. This work will provide theoretical basis and experimental guidance for oscillator-to-map transformation and discrete map energy calculation.
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具有两个记忆通道的记忆图线性化电路中的自适应能量调节器
如果在一个支路中加入磁通量相关忆阻器(MFDM)或电荷敏感忆阻器(CSM),非线性电路就能表现出多稳定性,这有助于估计磁场或电场效应。本文将两种不同类型的忆阻器并入由一个电容器和一个非线性电阻器组成的两个支路中,从而设计出具有双忆阻器通道的忆阻器电路。文中给出了电路方程,并讨论了带有两个忆阻器项的振荡器的动力学特性。然后,通过对忆阻振荡器的采样时间序列进行线性变换,将忆阻振荡器转换为忆阻图。利用亥姆霍兹定理得到了忆阻振荡器的汉密尔顿能量函数,它可以由忆阻电路的场能量映射得到。通过对离散能量函数施加适当的权重,提出了双重忆阻图的能量函数。研究了新的忆阻图的动力学行为,并提出了调节忆阻图发射模式的自适应法则。这项工作将为振荡器到映射的转换和离散映射能量计算提供理论基础和实验指导。
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