Enhanced photocatalytic degradation of pure and Cu-doped ZnO nanoparticles prepared under Co-precipitation method

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2024-02-01 DOI:10.15251/jor.2024.201.103
V. Balasubramanian, R. Jeyachitra, T. S. Senthil, S. Kalpana
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Abstract

The key goal of this study is to innovate the pure and 0.05, 0.10 and 0.15 wt.% of Cudoped ZnO NPs through co-precipitation technique. PXRD pattern shows the hexagonal crystal structure with no any phase impurity were observed for all the synthesized samples. From UV-Vis DRS spectra, band gap was obtained as 3.18, 3.24, 3.29 and 3.33 eV respectively for undoped, Cu-doped ZnO NPs (0.05, 0.10 and 0.15 wt.%). From SEM analysis, the agglomeration of rod-like morphology for pure ZnO NPs, spherical-like morphology for Cu-doped ZnO NPs (0.05 wt.%) and flake-like morphology for Cu-doped ZnO NPs (0.10 wt.%) and flower-like morphology for Cu-doped ZnO NPs (0.15 wt.%). The photocatalytic performance of the synthesized NPs was studied by the dye degradation of Methylene Blue (MB) under UV irradiation. The result exposed that, 0.15 wt.% of Cu-doped ZnO NPs is found to have efficient degradation candidate materials.
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共沉淀法制备的纯 ZnO 纳米粒子和掺铜 ZnO 纳米粒子的光催化降解能力增强
本研究的主要目标是通过共沉淀技术,创新性地合成纯度为 0.05、0.10 和 0.15 wt.% 的掺柘氧化锌纳米粒子。PXRD 图显示,所有合成样品均为六方晶体结构,无任何杂质。紫外可见 DRS 光谱显示,未掺杂、掺铜 ZnO NPs(0.05、0.10 和 0.15 wt.%)的带隙分别为 3.18、3.24、3.29 和 3.33 eV。从 SEM 分析来看,纯 ZnO NPs 呈棒状团聚,掺铜 ZnO NPs(0.05 wt.%)呈球状团聚,掺铜 ZnO NPs(0.10 wt.%)呈片状团聚,掺铜 ZnO NPs(0.15 wt.%)呈花状团聚。在紫外线照射下,通过降解染料亚甲基蓝(MB)研究了合成氮氧化物的光催化性能。结果表明,0.15 wt.% 的掺铜氧化锌 NPs 是高效的降解候选材料。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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