Origins and characterization techniques of stress in SiC crystals: A review

Abstract

Silicon carbide (SiC) is a promising semiconductor material which attracts huge attention due to its wide bandgap, high thermal conductivity and great potential for electronic applications. Residual stress causes defects in crystals that can noticeably decrease the performance of SiC devices. This paper reviews the origins of residual stress and different methods for stress characterization. To begin with, the origins of residual stress during crystal growth and post-processing is introduced. Then, the development of wafer size and quality over the last decade is demonstrated. Identification and characterization of residual stress using different techniques are discussed in detail. Optimizing temperature distribution and post-processing parameters is critical for reducing stress in SiC crystals.