Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor

IF 0.6 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Ferroelectrics Pub Date : 2024-02-20 DOI:10.1080/00150193.2023.2300613
Caixia Guo, Wenlong Jiao, Tianxing Wang
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引用次数: 0

Abstract

This article presents a theoretical study on the negative differential resistance (NDR) behavior of a bilaterally hydrogen-passivated Zigzag GeSe nanoribbon based single-gate field-effect transisto...
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基于氮掺杂之字形 GeSe 纳米带的单栅极场效应晶体管中的可调负差分电阻行为
本文对基于单栅场效应晶体管的双侧氢钝化之字形 GeSe 纳米带的负微分电阻 (NDR) 行为进行了理论研究。
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来源期刊
Ferroelectrics
Ferroelectrics 工程技术-材料科学:综合
CiteScore
1.30
自引率
12.50%
发文量
265
审稿时长
4.2 months
期刊介绍: Ferroelectrics is designed to provide a forum for people working in ferroelectrics and related materials such as ferroelastics, ferroelectric-ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, and liquid crystals. Ferroelectrics publishes experimental and theoretical papers aimed at the understanding of ferroelectricity and associated phenomena and applied papers dealing with the utilization of these materials in devices and systems. An important aspect of Ferroelectrics is to provide a vehicle for the publication of interdisciplinary papers involving ferroelectricity. The editor invites original papers and short communications on the theory, fabrication, properties, and applications of ferroelectrics and related materials. In addition to research papers, Ferroelectrics publishes appropriate and timely review articles.
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