A. S. Vokhmintsev, I. A. Petrenyov, R. V. Kamalov, M. S. Karabanalov, I. A. Weinstein, A. A. Rempel
{"title":"Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures","authors":"A. S. Vokhmintsev, I. A. Petrenyov, R. V. Kamalov, M. S. Karabanalov, I. A. Weinstein, A. A. Rempel","doi":"10.1134/s0012501623600262","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO<sub>2</sub>/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.</p>","PeriodicalId":532,"journal":{"name":"Doklady Physical Chemistry","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Doklady Physical Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1134/s0012501623600262","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.
期刊介绍：
Doklady Physical Chemistry is a monthly journal containing English translations of current Russian research in physical chemistry from the Physical Chemistry sections of the Doklady Akademii Nauk (Proceedings of the Russian Academy of Sciences). The journal publishes the most significant new research in physical chemistry being done in Russia, thus ensuring its scientific priority. Doklady Physical Chemistry presents short preliminary accounts of the application of the state-of-the-art physical chemistry ideas and methods to the study of organic and inorganic compounds and macromolecules; polymeric, inorganic and composite materials as well as corresponding processes. The journal is intended for scientists in all fields of chemistry and in interdisciplinary sciences.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
