Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois
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引用次数: 0
Abstract
We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.
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2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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