Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois
{"title":"Spatially-resolved UV-C emission in epitaxial monolayer boron nitride","authors":"Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois","doi":"10.1088/2053-1583/ad2f45","DOIUrl":null,"url":null,"abstract":"\n We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":"28 39","pages":""},"PeriodicalIF":5.5000,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/2053-1583/ad2f45","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.
期刊介绍：
ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
