Realizing reliable linearity and Forming-free in conductive bridging random access memory synapse by alloy electrode engineering

Abstract

In this work, by Alloy electrode engineering, the Ti-Ag device performed the Forming-free property because Ag ions were promoted to migrate into the GeTeOx layer to form a thicker conductive filament. This facilitated a uniform change in conductance with the pulse number, and the alloy synapse achieved a significant improvement in linearity (350%), which demonstrated its enhancement in recognition accuracy. To further validate its potential as a comprehensive artificial synapse, the multi-essential synaptic behaviors, including spike-timing-dependent plasticity, spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, and excitatory postsynaptic current, were achieved successfully.