High-performance of ZnO/TiO2 heterostructured thin-film photocatalyst fabricated via atomic layer deposition

Ji Young Park, Jeong Hwan Han, Byung Joon Choi
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Abstract

Oxide semiconductor is one of the most promising candidates for photocatalysts due to its light absorption ability, electronic properties, and stability. It is used in various applications such as solar-energy conversion, CO2 reduction, and water splitting. In this research, ZnO, TiO2, and ZnO/TiO2 heterostructured thin films are fabricated via atomic layer deposition (ALD), and their photocatalytic performances are evaluated. The film thickness can be controlled using ALD, and surface reactions can easily occur in thin films owing to the short distances between the active sites and charge carriers. In addition, unlike a powder catalyst, the bilayer photocatalyst is fixed in the solution; therefore, it does not make the solution turbid or disturb the light penetration. Diethylzinc and titanium tetraisopropoxide are used as precursors for Zn and Ti, and the thin films are deposited on soda-lime glass substrates at 150 °C using H2O as the reactant gas. The photocatalytic activity and stability are evaluated through photodegradation tests using methylene blue aqueous solution. The ZnO single-substance thin film exhibits a high degradation rate, but its performance significantly decreases after three consecutive experiments. The TiO2 single-substance thin film exhibits a relatively low degradation rate, but high reusability, exhibiting characteristics opposite to that of ZnO. Therefore, a TiO2 thin film is coated on ZnO to leverage both these advantages. The thin films are heat-treated at 400 °C for 10 min after deposition in a vacuum atmosphere. The surface morphology, crystal structure, and electrical characteristics of the photocatalyst specimens are analyzed through high-resolution scanning electron microscopy, Cs-corrected scanning transmission electron microscopy, and x-ray diffraction analysis. Their photocatalytic performances under ultraviolet (UV) irradiation are measured through UV–visible spectroscopy. The heat-treated ZnO/TiO2 heterostructured thin film exhibits a photodegradation rate exceeding 80%, with little degeneration after three cycles, indicating enhanced photodegradation performance and stability.
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通过原子层沉积制造的高性能氧化锌/二氧化钛异质结构薄膜光催化剂
氧化物半导体具有光吸收能力、电子特性和稳定性,是最有前途的光催化剂候选材料之一。它被广泛应用于太阳能转换、二氧化碳还原和水分离等领域。本研究通过原子层沉积(ALD)技术制备了 ZnO、TiO2 和 ZnO/TiO2 异质结构薄膜,并评估了它们的光催化性能。利用原子层沉积可以控制薄膜的厚度,由于活性位点与电荷载流子之间的距离很短,薄膜中很容易发生表面反应。此外,与粉末催化剂不同,双层光催化剂固定在溶液中,因此不会使溶液浑浊,也不会干扰光的穿透。二乙基锌和四异丙醇钛被用作锌和钛的前驱体,薄膜在 150 °C 下沉积在钠钙玻璃基底上,以 H2O 作为反应气体。通过使用亚甲基蓝水溶液进行光降解试验,评估了光催化活性和稳定性。ZnO 单质薄膜表现出较高的降解率,但连续三次实验后其性能明显下降。二氧化钛单质薄膜的降解率相对较低,但可重复使用性较高,表现出与氧化锌相反的特性。因此,在 ZnO 上镀一层 TiO2 薄膜,以充分利用这两个优点。薄膜在真空环境中沉积后,在 400 °C 下热处理 10 分钟。通过高分辨率扫描电子显微镜、铯校正扫描透射电子显微镜和 X 射线衍射分析,对光催化剂试样的表面形貌、晶体结构和电学特性进行了分析。它们在紫外线(UV)照射下的光催化性能是通过紫外可见光谱测量的。经过热处理的 ZnO/TiO2 异质结构薄膜的光降解率超过了 80%,并且在三个周期后几乎没有退化,这表明其光降解性能和稳定性得到了增强。
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