Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of Chemical Research Pub Date : 2024-03-07 DOI:10.1088/1361-6641/ad3112

Nengtao Wu, Zhiheng Xing, L. Luo, Guoqiang Li

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Abstract

In this letter, a p-GaN gate high-electron-mobility transistor (HEMT) with a high threshold voltage and better gate reliability was demonstrated by using selective plasma oxidation (SPO) and an additional low-temperature annealing step before gate metal is evaporated. After the SPO, a gallium oxynitride (GaON) dielectric layer was formed on the surface of p-GaN under the gate metal, and was studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), high-resolution transmission electron microscopy (HR-TEM) and energy dispersion spectroscopy (EDS). In addition, the fabricated metal/GaON/p-GaN gate HEMT exhibited a large threshold voltage (VTH) improvement from 1.46 V to 2.47 V. Furthermore, the forward gate breakdown voltage (VGS,BD) increased from 7.55 V to 11.10 V, and the maximum forward gate operating voltage (VGS-max) significantly improved from 5.0 V to 7.80 V for a ten-year lifetime with a 63.2% failure rate. Kelvin Probe Force Microscopy (KPFM) reveals that the surface potential increased after SPO, and the shift of valence band maximum (VBM) obtained by XPS spectra was 0.7 eV lower than that of the p-GaN, which further improves the Schottky barrier height (SBH) at the gate metal/GaON interfaces to holes, thereby improving VTH and reducing IGS of the device. As a barrier layer, GaON suppressed the injection of carrier into the depletion region under a high electric field and enhanced the reliability of the gate.

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使用选择性等离子氧化技术的正常关断 GaON/p-GaN 栅极 HEMT：从结构表征、性能改进到物理机制

在这封信中，通过使用选择性等离子氧化（SPO）和栅极金属蒸发前的额外低温退火步骤，证明了具有高阈值电压和更好栅极可靠性的 p-GaN 栅极高电子迁移率晶体管（HEMT）。在 SPO 之后，栅极金属下的 p-GaN 表面形成了氧化镓（GaON）介质层，并通过 X 射线光电子能谱（XPS）、二次离子质谱（SIMS）、高分辨率透射电子显微镜（HR-TEM）和能量色散光谱（EDS）进行了研究。此外，所制造的金属/GaON/p-GaN 栅极 HEMT 的阈值电压 (VTH) 从 1.46 V 大幅提高到 2.47 V。此外，正向栅极击穿电压（VGS,BD）从 7.55 V 提高到 11.10 V，最大正向栅极工作电压（VGS-max）从 5.0 V 显著提高到 7.80 V，使用寿命长达十年，故障率为 63.2%。开尔文探针力显微镜（KPFM）显示，SPO 后表面电位升高，XPS 光谱得到的价带最大值（VBM）偏移比 p-GaN 低 0.7 eV，这进一步提高了栅极金属/GaON 与空穴界面的肖特基势垒高度（SBH），从而提高了器件的 VTH，降低了 IGS。作为阻挡层，GaON 可抑制载流子在高电场下注入耗尽区，从而提高栅极的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.